Structural characterization of hydrogenated a-Si using slow positron beam techniques

D. T. Britton, A. Hempel, D. Knoesen, W. Bauer-Kugelmann, W. Triftshäuser

Resultado de la investigación: Contribución a una revistaArtículo de la conferenciarevisión exhaustiva

9 Citas (Scopus)

Resumen

Hydrogenated amorphous silicon (a-Si:H) grown by hot wire chemical vapour deposition is a promising candidate for robust inexpensive solar cells. However, prolonged exposure to light is known to lead to a reduction in efficiency of a-Si:H devices. The causes for this ageing effect are still unclear, but may be related to a structural relaxation or change in hydrogen content. In this work, results are presented for positron beam studies of the defect structure, using both lifetime and Doppler-broadening spectroscopy, of a-Si:H grown under different conditions.

Idioma originalInglés
Páginas (desde-hasta)1010-1015
Número de páginas6
PublicaciónNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volumen164
DOI
EstadoPublicada - 1 ene 2000
EventoICACS-18: 18th International Conference on Atomic Collisions in Solids - Odense, Denmark
Duración: 3 ago 19998 ago 1999

Áreas temáticas de ASJC Scopus

  • Física nuclear y de alta energía
  • Instrumental

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