Stability and electronic structure of hydrogen-nitrogen complexes were investigated in gallium arsenide. The formation of strong NAs-H bond was found when a single hydrogen atom was incorporated in the lowest-energy bond centered (BC) position. The electronic structure of this complex showed the passivation of the gap level restoring the GaAs band gap.
Áreas temáticas de ASJC Scopus
- Física y astronomía (miscelánea)