Stability and electronic structure of hydrogen-nitrogen complexes in GaAs

W. Orellana; A. C. Ferraz

doi:10.1063/1.1521571

Stability and electronic structure of hydrogen-nitrogen complexes in GaAs

W. Orellana, A. C. Ferraz

Facultad Ciencias Exactas

Resultado de la investigación: Contribución a una revista › Artículo › revisión exhaustiva

7 Citas (Scopus)

Resumen

Stability and electronic structure of hydrogen-nitrogen complexes were investigated in gallium arsenide. The formation of strong N_As-H bond was found when a single hydrogen atom was incorporated in the lowest-energy bond centered (BC) position. The electronic structure of this complex showed the passivation of the gap level restoring the GaAs band gap.

Idioma original	Inglés
Páginas (desde-hasta)	3816-3818
Número de páginas	3
Publicación	Applied Physics Letters
Volumen	81
N.º	20
DOI	https://doi.org/10.1063/1.1521571
Estado	Publicada - 11 nov. 2002

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Física y astronomía (miscelánea)

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title = "Stability and electronic structure of hydrogen-nitrogen complexes in GaAs",

abstract = "Stability and electronic structure of hydrogen-nitrogen complexes were investigated in gallium arsenide. The formation of strong NAs-H bond was found when a single hydrogen atom was incorporated in the lowest-energy bond centered (BC) position. The electronic structure of this complex showed the passivation of the gap level restoring the GaAs band gap.",

author = "W. Orellana and Ferraz, {A. C.}",

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AU - Ferraz, A. C.

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AB - Stability and electronic structure of hydrogen-nitrogen complexes were investigated in gallium arsenide. The formation of strong NAs-H bond was found when a single hydrogen atom was incorporated in the lowest-energy bond centered (BC) position. The electronic structure of this complex showed the passivation of the gap level restoring the GaAs band gap.

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U2 - 10.1063/1.1521571

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Stability and electronic structure of hydrogen-nitrogen complexes in GaAs

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