Sn-doped CdTe as promising intermediate-band photovoltaic material

Mauricio A. Flores, Eduardo Men�ndez-Proupin, Walter Orellana, Juan L. Peǹa

Resultado de la investigación: Contribución a una revistaArtículo

14 Citas (Scopus)

Resumen

The formation energies, charge transition levels and quasiparticle defect states of several tin-related impurities are investigated within the DFT + GW formalism. The optical spectrum obtained from the solution of the Bethe-Salpeter equation shows that the absorption strongly increases in the sub-bandgap region after doping, suggesting a two-step photoexcitation process that facilitates transitions from photons with insufficient energy to cause direct transitions from the valence to the conduction band via an intermediate-band. We propose Sn-doped CdTe as a promising candidate for the development of high-efficiency solar cells, which could potentially overcome the Shockley-Queisser limit.

Idioma originalInglés
Número de artículo035501
PublicaciónJournal of Physics D: Applied Physics
Volumen50
N.º3
DOI
EstadoPublicada - 25 ene 2017

Áreas temáticas de ASJC Scopus

  • Materiales electrónicos, ópticos y magnéticos
  • Física de la materia condensada
  • Acústica y ultrasonidos
  • Superficies, recubrimientos y láminas

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