Positron states in hydrogenated amorphous silicon

D. T. Britton, M. Härting, A. Hempel, G. Kögel, P. Sperr, W. Triftshäuser, M. Hempel, D. Knoesen

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

4 Citas (Scopus)

Resumen

Low-hydrogen-concentration a-Si:H grown by HW-CVD forms a continuous random network with no detectable free volume in the form of microvoids, and no evidence of a microcrystalline phase. Over a wide temperature range we observe a single positron state in the amorphous network with a temperature-independent lifetime of 322 ps. From the temperature dependence of the positron diffusion we show that this is a localized state and present direct observation of hopping diffusion of positrons. On annealing up to 400 °C the amorphous network is seen to relax and the first stages of crystallization occur. There is also evidence of vacancy clustering to form a low concentration of microvoids. The structural relaxation has a very low-activation energy, around 0.1 eV, and is interpreted in terms of a reconfiguration of the fundamental defect identifed by positron annihilation.

Idioma originalInglés
Páginas (desde-hasta)249-253
Número de páginas5
PublicaciónJournal of Non-Crystalline Solids
Volumen299-302
N.ºPART 1
DOI
EstadoPublicada - abr 2002

Áreas temáticas de ASJC Scopus

  • Cerámicos y compuestos
  • Materiales electrónicos, ópticos y magnéticos
  • Física de la materia condensada
  • Química de los materiales

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