Positron states in hydrogenated amorphous silicon

D. T. Britton, M. Härting, A. Hempel, G. Kögel, P. Sperr, W. Triftshäuser, M. Hempel, D. Knoesen

Resultado de la investigación: Article

4 Citas (Scopus)

Resumen

Low-hydrogen-concentration a-Si:H grown by HW-CVD forms a continuous random network with no detectable free volume in the form of microvoids, and no evidence of a microcrystalline phase. Over a wide temperature range we observe a single positron state in the amorphous network with a temperature-independent lifetime of 322 ps. From the temperature dependence of the positron diffusion we show that this is a localized state and present direct observation of hopping diffusion of positrons. On annealing up to 400 °C the amorphous network is seen to relax and the first stages of crystallization occur. There is also evidence of vacancy clustering to form a low concentration of microvoids. The structural relaxation has a very low-activation energy, around 0.1 eV, and is interpreted in terms of a reconfiguration of the fundamental defect identifed by positron annihilation.

Idioma originalEnglish
Páginas (desde-hasta)249-253
Número de páginas5
PublicaciónJournal of Non-Crystalline Solids
Volumen299-302
N.ºPART 1
DOI
EstadoPublished - abr 2002

Huella dactilar

Positrons
Amorphous silicon
amorphous silicon
positrons
Hydrogen
Structural relaxation
Positron annihilation
Free volume
Crystallization
positron annihilation
Temperature
Vacancies
low concentrations
Chemical vapor deposition
Activation energy
vapor deposition
Annealing
crystallization
activation energy
life (durability)

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Citar esto

Britton, D. T., Härting, M., Hempel, A., Kögel, G., Sperr, P., Triftshäuser, W., ... Knoesen, D. (2002). Positron states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 299-302(PART 1), 249-253. https://doi.org/10.1016/S0022-3093(01)01165-6
Britton, D. T. ; Härting, M. ; Hempel, A. ; Kögel, G. ; Sperr, P. ; Triftshäuser, W. ; Hempel, M. ; Knoesen, D. / Positron states in hydrogenated amorphous silicon. En: Journal of Non-Crystalline Solids. 2002 ; Vol. 299-302, N.º PART 1. pp. 249-253.
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Britton, DT, Härting, M, Hempel, A, Kögel, G, Sperr, P, Triftshäuser, W, Hempel, M & Knoesen, D 2002, 'Positron states in hydrogenated amorphous silicon', Journal of Non-Crystalline Solids, vol. 299-302, n.º PART 1, pp. 249-253. https://doi.org/10.1016/S0022-3093(01)01165-6

Positron states in hydrogenated amorphous silicon. / Britton, D. T.; Härting, M.; Hempel, A.; Kögel, G.; Sperr, P.; Triftshäuser, W.; Hempel, M.; Knoesen, D.

En: Journal of Non-Crystalline Solids, Vol. 299-302, N.º PART 1, 04.2002, p. 249-253.

Resultado de la investigación: Article

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T1 - Positron states in hydrogenated amorphous silicon

AU - Britton, D. T.

AU - Härting, M.

AU - Hempel, A.

AU - Kögel, G.

AU - Sperr, P.

AU - Triftshäuser, W.

AU - Hempel, M.

AU - Knoesen, D.

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AB - Low-hydrogen-concentration a-Si:H grown by HW-CVD forms a continuous random network with no detectable free volume in the form of microvoids, and no evidence of a microcrystalline phase. Over a wide temperature range we observe a single positron state in the amorphous network with a temperature-independent lifetime of 322 ps. From the temperature dependence of the positron diffusion we show that this is a localized state and present direct observation of hopping diffusion of positrons. On annealing up to 400 °C the amorphous network is seen to relax and the first stages of crystallization occur. There is also evidence of vacancy clustering to form a low concentration of microvoids. The structural relaxation has a very low-activation energy, around 0.1 eV, and is interpreted in terms of a reconfiguration of the fundamental defect identifed by positron annihilation.

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Britton DT, Härting M, Hempel A, Kögel G, Sperr P, Triftshäuser W y otros. Positron states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids. 2002 abr;299-302(PART 1):249-253. https://doi.org/10.1016/S0022-3093(01)01165-6