Negatively charged vacancy defects in 6H-SiC after low-energy proton implantation and annealing

M. F. Barthe, D. T. Britton, C. Corbel, A. Hempel, L. Henry, P. Desgardin, W. Bauer-Kugelmann, G. Kögel, P. Sperr, W. Triftshäuser

Resultado de la investigación: Article

4 Citas (Scopus)

Resumen

We have used pulsed-slow-positron-beam-based positron lifetime spectroscopy to investigate the nature of acceptors and charge states of vacancy-type defects in low-energy proton-implanted 6H-SiC(H). We can infer from the temperature dependence of the lifetime spectra that neutral and negatively charged vacancy clusters exist in the track region. Depending on annealing, they give rise to positron lifetimes of 257 ±2, 281 ±4 and 345 ±2 ps, respectively. The 281 ps cluster has likely an ionization level near the middle of the band gap. By comparison with theory, the 257 and 280 ps are identified as (VC-VSi)2 and (VC-VSi)3 clusters, respectively. In addition, other acceptors of ionic type act as strong trapping centers at low temperature (T < 150 K). Neutral monovacancy-like complexes are also detected with a lifetime of 160 ±2 after 900°C annealing.

Idioma originalEnglish
Páginas (desde-hasta)668-670
Número de páginas3
PublicaciónPhysica B: Condensed Matter
Volumen308-310
DOI
EstadoPublished - dic 2001

Huella dactilar

Positrons
proton energy
Ion implantation
Vacancies
Protons
implantation
Annealing
positrons
life (durability)
Defects
annealing
defects
Ionization
Energy gap
Spectroscopy
Hydrogen
Temperature
trapping
ionization
temperature dependence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Citar esto

Barthe, M. F., Britton, D. T., Corbel, C., Hempel, A., Henry, L., Desgardin, P., ... Triftshäuser, W. (2001). Negatively charged vacancy defects in 6H-SiC after low-energy proton implantation and annealing. Physica B: Condensed Matter, 308-310, 668-670. https://doi.org/10.1016/S0921-4526(01)00786-4
Barthe, M. F. ; Britton, D. T. ; Corbel, C. ; Hempel, A. ; Henry, L. ; Desgardin, P. ; Bauer-Kugelmann, W. ; Kögel, G. ; Sperr, P. ; Triftshäuser, W. / Negatively charged vacancy defects in 6H-SiC after low-energy proton implantation and annealing. En: Physica B: Condensed Matter. 2001 ; Vol. 308-310. pp. 668-670.
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title = "Negatively charged vacancy defects in 6H-SiC after low-energy proton implantation and annealing",
abstract = "We have used pulsed-slow-positron-beam-based positron lifetime spectroscopy to investigate the nature of acceptors and charge states of vacancy-type defects in low-energy proton-implanted 6H-SiC(H). We can infer from the temperature dependence of the lifetime spectra that neutral and negatively charged vacancy clusters exist in the track region. Depending on annealing, they give rise to positron lifetimes of 257 ±2, 281 ±4 and 345 ±2 ps, respectively. The 281 ps cluster has likely an ionization level near the middle of the band gap. By comparison with theory, the 257 and 280 ps are identified as (VC-VSi)2 and (VC-VSi)3 clusters, respectively. In addition, other acceptors of ionic type act as strong trapping centers at low temperature (T < 150 K). Neutral monovacancy-like complexes are also detected with a lifetime of 160 ±2 after 900°C annealing.",
keywords = "Proton implantation, Silicon carbide, Slow positron annihilation, Vacancies defects",
author = "Barthe, {M. F.} and Britton, {D. T.} and C. Corbel and A. Hempel and L. Henry and P. Desgardin and W. Bauer-Kugelmann and G. K{\"o}gel and P. Sperr and W. Triftsh{\"a}user",
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Barthe, MF, Britton, DT, Corbel, C, Hempel, A, Henry, L, Desgardin, P, Bauer-Kugelmann, W, Kögel, G, Sperr, P & Triftshäuser, W 2001, 'Negatively charged vacancy defects in 6H-SiC after low-energy proton implantation and annealing', Physica B: Condensed Matter, vol. 308-310, pp. 668-670. https://doi.org/10.1016/S0921-4526(01)00786-4

Negatively charged vacancy defects in 6H-SiC after low-energy proton implantation and annealing. / Barthe, M. F.; Britton, D. T.; Corbel, C.; Hempel, A.; Henry, L.; Desgardin, P.; Bauer-Kugelmann, W.; Kögel, G.; Sperr, P.; Triftshäuser, W.

En: Physica B: Condensed Matter, Vol. 308-310, 12.2001, p. 668-670.

Resultado de la investigación: Article

TY - JOUR

T1 - Negatively charged vacancy defects in 6H-SiC after low-energy proton implantation and annealing

AU - Barthe, M. F.

AU - Britton, D. T.

AU - Corbel, C.

AU - Hempel, A.

AU - Henry, L.

AU - Desgardin, P.

AU - Bauer-Kugelmann, W.

AU - Kögel, G.

AU - Sperr, P.

AU - Triftshäuser, W.

PY - 2001/12

Y1 - 2001/12

N2 - We have used pulsed-slow-positron-beam-based positron lifetime spectroscopy to investigate the nature of acceptors and charge states of vacancy-type defects in low-energy proton-implanted 6H-SiC(H). We can infer from the temperature dependence of the lifetime spectra that neutral and negatively charged vacancy clusters exist in the track region. Depending on annealing, they give rise to positron lifetimes of 257 ±2, 281 ±4 and 345 ±2 ps, respectively. The 281 ps cluster has likely an ionization level near the middle of the band gap. By comparison with theory, the 257 and 280 ps are identified as (VC-VSi)2 and (VC-VSi)3 clusters, respectively. In addition, other acceptors of ionic type act as strong trapping centers at low temperature (T < 150 K). Neutral monovacancy-like complexes are also detected with a lifetime of 160 ±2 after 900°C annealing.

AB - We have used pulsed-slow-positron-beam-based positron lifetime spectroscopy to investigate the nature of acceptors and charge states of vacancy-type defects in low-energy proton-implanted 6H-SiC(H). We can infer from the temperature dependence of the lifetime spectra that neutral and negatively charged vacancy clusters exist in the track region. Depending on annealing, they give rise to positron lifetimes of 257 ±2, 281 ±4 and 345 ±2 ps, respectively. The 281 ps cluster has likely an ionization level near the middle of the band gap. By comparison with theory, the 257 and 280 ps are identified as (VC-VSi)2 and (VC-VSi)3 clusters, respectively. In addition, other acceptors of ionic type act as strong trapping centers at low temperature (T < 150 K). Neutral monovacancy-like complexes are also detected with a lifetime of 160 ±2 after 900°C annealing.

KW - Proton implantation

KW - Silicon carbide

KW - Slow positron annihilation

KW - Vacancies defects

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U2 - 10.1016/S0921-4526(01)00786-4

DO - 10.1016/S0921-4526(01)00786-4

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