Influence of growth temperature on the microcrystallinity and native defect structure of hydrogenated amorphous silicon

M. Härting, D. T. Britton, R. Bucher, E. Minani, A. Hempel, T. P. Ntsoane, M. Hempel, C. Arendse, D. Knoesen

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

9 Citas (Scopus)

Resumen

The microstructure of hydrogenated amorphous silicon grown by hot-wire chemical vapour deposition (HW-CVD) on glass substrates, at different substrate temperatures ranging from 300 to 500 °C, has been studied using X-ray diffraction and positron annihilation techniques. In previous studies it has been shown that recrystallization is accompanied by a relaxation of the defect structure with an increase in the free volume at the positron annihilation site. The object of this work is to relate the initial defect configuration to the degree of order in the structure, which has been characterized through its radial density function giving accurate estimates of the nearest-neighbour separation and bond angles.

Idioma originalInglés
Páginas (desde-hasta)103-107
Número de páginas5
PublicaciónJournal of Non-Crystalline Solids
Volumen299
N.º302
DOI
EstadoPublicada - 1 ene 2002

Áreas temáticas de ASJC Scopus

  • Materiales electrónicos, ópticos y magnéticos
  • Cerámicos y compuestos
  • Física de la materia condensada
  • Química de los materiales

Huella

Profundice en los temas de investigación de 'Influence of growth temperature on the microcrystallinity and native defect structure of hydrogenated amorphous silicon'. En conjunto forman una huella única.

Citar esto