Inducing a level inside of CdTe bandgap doping with Sn using a co-sublimation technique by CSS

J. A. Ríos-González, R. Mis-Fernández, E. Camacho-Espinosa, I. Riech, E. Menéndez-Proupin, M. A. Flores, W. Orellana, J. L. Peña

Resultado de la investigación: Article

Resumen

In this work, cadmium telluride (CdTe) thin films were doped with Sn using a low-cost co-sublimation technique by a homemade close-spaced sublimation (CSS) system. Sn amount was calculated to obtain CdTe film doped with a percentage content lower than 0.4 at%. Chemical, structural, morphological, and optical properties of the as-deposited CdTe (u-CdTe) and Sn-doped CdTe (t-CdTe) films were measured and compared. Raman and XPS characterization showed the presence of Sn in t-CdTe thin films and XRD analysis revealed a strong signal related to CdTe planes (220) and (311) and in a lesser extent a signal related to SnTe. Irregular shaped grains with similar size related to Sn incorporation in the films were found with FE-SEM technique. Photoluminescence spectrum indicates an energy band at 0.7 eV, generating a band inside of CdTe bandgap, due to defects induced by the Sn in CdTe lattice, matching with a theoretical study. The changes observed in Sn doped CdTe film suggest that it can be used for optoelectronics applications.

Idioma originalEnglish
Número de artículo104836
PublicaciónMaterials Science in Semiconductor Processing
Volumen107
DOI
EstadoPublished - 1 mar 2020

Huella dactilar

Cadmium telluride
cadmium tellurides
Sublimation
sublimation
Energy gap
Doping (additives)
cadmium telluride
Thin films
thin films
chemical properties
Optoelectronic devices
Band structure
energy bands
Structural properties
Photoluminescence
X ray photoelectron spectroscopy
Optical properties
photoluminescence
optical properties
Defects

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Citar esto

Ríos-González, J. A., Mis-Fernández, R., Camacho-Espinosa, E., Riech, I., Menéndez-Proupin, E., Flores, M. A., ... Peña, J. L. (2020). Inducing a level inside of CdTe bandgap doping with Sn using a co-sublimation technique by CSS. Materials Science in Semiconductor Processing, 107, [104836]. https://doi.org/10.1016/j.mssp.2019.104836
Ríos-González, J. A. ; Mis-Fernández, R. ; Camacho-Espinosa, E. ; Riech, I. ; Menéndez-Proupin, E. ; Flores, M. A. ; Orellana, W. ; Peña, J. L. / Inducing a level inside of CdTe bandgap doping with Sn using a co-sublimation technique by CSS. En: Materials Science in Semiconductor Processing. 2020 ; Vol. 107.
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abstract = "In this work, cadmium telluride (CdTe) thin films were doped with Sn using a low-cost co-sublimation technique by a homemade close-spaced sublimation (CSS) system. Sn amount was calculated to obtain CdTe film doped with a percentage content lower than 0.4 at{\%}. Chemical, structural, morphological, and optical properties of the as-deposited CdTe (u-CdTe) and Sn-doped CdTe (t-CdTe) films were measured and compared. Raman and XPS characterization showed the presence of Sn in t-CdTe thin films and XRD analysis revealed a strong signal related to CdTe planes (220) and (311) and in a lesser extent a signal related to SnTe. Irregular shaped grains with similar size related to Sn incorporation in the films were found with FE-SEM technique. Photoluminescence spectrum indicates an energy band at 0.7 eV, generating a band inside of CdTe bandgap, due to defects induced by the Sn in CdTe lattice, matching with a theoretical study. The changes observed in Sn doped CdTe film suggest that it can be used for optoelectronics applications.",
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Ríos-González, JA, Mis-Fernández, R, Camacho-Espinosa, E, Riech, I, Menéndez-Proupin, E, Flores, MA, Orellana, W & Peña, JL 2020, 'Inducing a level inside of CdTe bandgap doping with Sn using a co-sublimation technique by CSS', Materials Science in Semiconductor Processing, vol. 107, 104836. https://doi.org/10.1016/j.mssp.2019.104836

Inducing a level inside of CdTe bandgap doping with Sn using a co-sublimation technique by CSS. / Ríos-González, J. A.; Mis-Fernández, R.; Camacho-Espinosa, E.; Riech, I.; Menéndez-Proupin, E.; Flores, M. A.; Orellana, W.; Peña, J. L.

En: Materials Science in Semiconductor Processing, Vol. 107, 104836, 01.03.2020.

Resultado de la investigación: Article

TY - JOUR

T1 - Inducing a level inside of CdTe bandgap doping with Sn using a co-sublimation technique by CSS

AU - Ríos-González, J. A.

AU - Mis-Fernández, R.

AU - Camacho-Espinosa, E.

AU - Riech, I.

AU - Menéndez-Proupin, E.

AU - Flores, M. A.

AU - Orellana, W.

AU - Peña, J. L.

PY - 2020/3/1

Y1 - 2020/3/1

N2 - In this work, cadmium telluride (CdTe) thin films were doped with Sn using a low-cost co-sublimation technique by a homemade close-spaced sublimation (CSS) system. Sn amount was calculated to obtain CdTe film doped with a percentage content lower than 0.4 at%. Chemical, structural, morphological, and optical properties of the as-deposited CdTe (u-CdTe) and Sn-doped CdTe (t-CdTe) films were measured and compared. Raman and XPS characterization showed the presence of Sn in t-CdTe thin films and XRD analysis revealed a strong signal related to CdTe planes (220) and (311) and in a lesser extent a signal related to SnTe. Irregular shaped grains with similar size related to Sn incorporation in the films were found with FE-SEM technique. Photoluminescence spectrum indicates an energy band at 0.7 eV, generating a band inside of CdTe bandgap, due to defects induced by the Sn in CdTe lattice, matching with a theoretical study. The changes observed in Sn doped CdTe film suggest that it can be used for optoelectronics applications.

AB - In this work, cadmium telluride (CdTe) thin films were doped with Sn using a low-cost co-sublimation technique by a homemade close-spaced sublimation (CSS) system. Sn amount was calculated to obtain CdTe film doped with a percentage content lower than 0.4 at%. Chemical, structural, morphological, and optical properties of the as-deposited CdTe (u-CdTe) and Sn-doped CdTe (t-CdTe) films were measured and compared. Raman and XPS characterization showed the presence of Sn in t-CdTe thin films and XRD analysis revealed a strong signal related to CdTe planes (220) and (311) and in a lesser extent a signal related to SnTe. Irregular shaped grains with similar size related to Sn incorporation in the films were found with FE-SEM technique. Photoluminescence spectrum indicates an energy band at 0.7 eV, generating a band inside of CdTe bandgap, due to defects induced by the Sn in CdTe lattice, matching with a theoretical study. The changes observed in Sn doped CdTe film suggest that it can be used for optoelectronics applications.

KW - Closed-spaced sublimation

KW - Doping

KW - Intermediate band

KW - Low-cost

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U2 - 10.1016/j.mssp.2019.104836

DO - 10.1016/j.mssp.2019.104836

M3 - Article

AN - SCOPUS:85074904383

VL - 107

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

M1 - 104836

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Ríos-González JA, Mis-Fernández R, Camacho-Espinosa E, Riech I, Menéndez-Proupin E, Flores MA y otros. Inducing a level inside of CdTe bandgap doping with Sn using a co-sublimation technique by CSS. Materials Science in Semiconductor Processing. 2020 mar 1;107. 104836. https://doi.org/10.1016/j.mssp.2019.104836