Hopping transport of positrons in hydrogenated amorphous silicon

D. T. Britton, A. Hempel, W. Triftshäuser

Resultado de la investigación: Contribución a una revistaArtículo

9 Citas (Scopus)

Resumen

Positron diffusion was investigated in hydrogenated amorphous silicon using positron beam timing spectroscopy. The measurement of the rate of emission of annihilation photons as a function of the time interval between annihilation and incoming pulse of positrons, allowed the measurement of positron lifetime spectrum at different depths. The results indicated that the dominant positron state in a particular covalent random network was a localized state located at hydrogen terminated dangling bond defects. Hopping diffusion of positrons was observed and the migration enthalpy for positrons in that state was found to be 17.7(3) meV.

Idioma originalInglés
Número de artículo217401
Páginas (desde-hasta)2174011-2174014
Número de páginas4
PublicaciónPhysical Review Letters
Volumen87
N.º21
EstadoPublicada - 19 nov 2001

Áreas temáticas de ASJC Scopus

  • Física y astronomía (todo)

Huella Profundice en los temas de investigación de 'Hopping transport of positrons in hydrogenated amorphous silicon'. En conjunto forman una huella única.

  • Citar esto

    Britton, D. T., Hempel, A., & Triftshäuser, W. (2001). Hopping transport of positrons in hydrogenated amorphous silicon. Physical Review Letters, 87(21), 2174011-2174014. [217401].