Hopping transport of positrons in hydrogenated amorphous silicon

D. T. Britton, A. Hempel, W. Triftshäuser

Resultado de la investigación: Article

9 Citas (Scopus)

Resumen

Positron diffusion was investigated in hydrogenated amorphous silicon using positron beam timing spectroscopy. The measurement of the rate of emission of annihilation photons as a function of the time interval between annihilation and incoming pulse of positrons, allowed the measurement of positron lifetime spectrum at different depths. The results indicated that the dominant positron state in a particular covalent random network was a localized state located at hydrogen terminated dangling bond defects. Hopping diffusion of positrons was observed and the migration enthalpy for positrons in that state was found to be 17.7(3) meV.

Idioma originalEnglish
Número de artículo217401
Páginas (desde-hasta)2174011-2174014
Número de páginas4
PublicaciónPhysical Review Letters
Volumen87
N.º21
EstadoPublished - 19 nov 2001

Huella dactilar

amorphous silicon
positrons
enthalpy
time measurement
intervals
life (durability)
defects
photons
hydrogen
pulses
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Citar esto

Britton, D. T., Hempel, A., & Triftshäuser, W. (2001). Hopping transport of positrons in hydrogenated amorphous silicon. Physical Review Letters, 87(21), 2174011-2174014. [217401].
Britton, D. T. ; Hempel, A. ; Triftshäuser, W. / Hopping transport of positrons in hydrogenated amorphous silicon. En: Physical Review Letters. 2001 ; Vol. 87, N.º 21. pp. 2174011-2174014.
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abstract = "Positron diffusion was investigated in hydrogenated amorphous silicon using positron beam timing spectroscopy. The measurement of the rate of emission of annihilation photons as a function of the time interval between annihilation and incoming pulse of positrons, allowed the measurement of positron lifetime spectrum at different depths. The results indicated that the dominant positron state in a particular covalent random network was a localized state located at hydrogen terminated dangling bond defects. Hopping diffusion of positrons was observed and the migration enthalpy for positrons in that state was found to be 17.7(3) meV.",
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Britton, DT, Hempel, A & Triftshäuser, W 2001, 'Hopping transport of positrons in hydrogenated amorphous silicon', Physical Review Letters, vol. 87, n.º 21, 217401, pp. 2174011-2174014.

Hopping transport of positrons in hydrogenated amorphous silicon. / Britton, D. T.; Hempel, A.; Triftshäuser, W.

En: Physical Review Letters, Vol. 87, N.º 21, 217401, 19.11.2001, p. 2174011-2174014.

Resultado de la investigación: Article

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AU - Britton, D. T.

AU - Hempel, A.

AU - Triftshäuser, W.

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Y1 - 2001/11/19

N2 - Positron diffusion was investigated in hydrogenated amorphous silicon using positron beam timing spectroscopy. The measurement of the rate of emission of annihilation photons as a function of the time interval between annihilation and incoming pulse of positrons, allowed the measurement of positron lifetime spectrum at different depths. The results indicated that the dominant positron state in a particular covalent random network was a localized state located at hydrogen terminated dangling bond defects. Hopping diffusion of positrons was observed and the migration enthalpy for positrons in that state was found to be 17.7(3) meV.

AB - Positron diffusion was investigated in hydrogenated amorphous silicon using positron beam timing spectroscopy. The measurement of the rate of emission of annihilation photons as a function of the time interval between annihilation and incoming pulse of positrons, allowed the measurement of positron lifetime spectrum at different depths. The results indicated that the dominant positron state in a particular covalent random network was a localized state located at hydrogen terminated dangling bond defects. Hopping diffusion of positrons was observed and the migration enthalpy for positrons in that state was found to be 17.7(3) meV.

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Britton DT, Hempel A, Triftshäuser W. Hopping transport of positrons in hydrogenated amorphous silicon. Physical Review Letters. 2001 nov 19;87(21):2174011-2174014. 217401.