Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation

D. T. Britton, M. F. Barthe, C. Corbel, A. Hempel, L. Henry, P. Desgardin, W. Bauer-Kugelmann, G. Kögel, P. Sperr, W. Triftshäuser

Resultado de la investigación: Article

19 Citas (Scopus)

Resumen

We have used pulsed-slow-positron-beam-based positron lifetime spectroscopy to investigate the nature of acceptors and charge states of vacancy-type defects in low-energy proton-implanted 6H-SiC(H). We can infer from the temperature dependence of the lifetime spectra that neutral and negatively charged vacancy clusters exist in the track region. Depending on annealing, they give rise to positron lifetimes of 257±2, 281±4, and 345±2 ps, respectively. The 281 ps cluster likely has an ionization level near the middle of the band gap. By comparison with theory, the 257 and 280 ps are identified as (VC-VSi)2 and (VC-VSi)3 clusters, respectively. In addition, other acceptors of ionic type act as strong trapping centers at low temperature (T<150 K). Neutral monovacancy-like complexes are also detected with a lifetime of 160±2 after 900 °C annealing.

Idioma originalEnglish
Páginas (desde-hasta)1234-1236
Número de páginas3
PublicaciónApplied Physics Letters
Volumen78
N.º9
DOI
EstadoPublished - 26 feb 2001

Huella dactilar

proton energy
implantation
positrons
life (durability)
defects
annealing
trapping
ionization
temperature dependence
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Citar esto

Britton, D. T., Barthe, M. F., Corbel, C., Hempel, A., Henry, L., Desgardin, P., ... Triftshäuser, W. (2001). Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation. Applied Physics Letters, 78(9), 1234-1236. https://doi.org/10.1063/1.1350961
Britton, D. T. ; Barthe, M. F. ; Corbel, C. ; Hempel, A. ; Henry, L. ; Desgardin, P. ; Bauer-Kugelmann, W. ; Kögel, G. ; Sperr, P. ; Triftshäuser, W. / Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation. En: Applied Physics Letters. 2001 ; Vol. 78, N.º 9. pp. 1234-1236.
@article{afe03d4371904795841b9c92fb13f5f9,
title = "Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation",
abstract = "We have used pulsed-slow-positron-beam-based positron lifetime spectroscopy to investigate the nature of acceptors and charge states of vacancy-type defects in low-energy proton-implanted 6H-SiC(H). We can infer from the temperature dependence of the lifetime spectra that neutral and negatively charged vacancy clusters exist in the track region. Depending on annealing, they give rise to positron lifetimes of 257±2, 281±4, and 345±2 ps, respectively. The 281 ps cluster likely has an ionization level near the middle of the band gap. By comparison with theory, the 257 and 280 ps are identified as (VC-VSi)2 and (VC-VSi)3 clusters, respectively. In addition, other acceptors of ionic type act as strong trapping centers at low temperature (T<150 K). Neutral monovacancy-like complexes are also detected with a lifetime of 160±2 after 900 °C annealing.",
author = "Britton, {D. T.} and Barthe, {M. F.} and C. Corbel and A. Hempel and L. Henry and P. Desgardin and W. Bauer-Kugelmann and G. K{\"o}gel and P. Sperr and W. Triftsh{\"a}user",
year = "2001",
month = "2",
day = "26",
doi = "10.1063/1.1350961",
language = "English",
volume = "78",
pages = "1234--1236",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "9",

}

Britton, DT, Barthe, MF, Corbel, C, Hempel, A, Henry, L, Desgardin, P, Bauer-Kugelmann, W, Kögel, G, Sperr, P & Triftshäuser, W 2001, 'Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation', Applied Physics Letters, vol. 78, n.º 9, pp. 1234-1236. https://doi.org/10.1063/1.1350961

Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation. / Britton, D. T.; Barthe, M. F.; Corbel, C.; Hempel, A.; Henry, L.; Desgardin, P.; Bauer-Kugelmann, W.; Kögel, G.; Sperr, P.; Triftshäuser, W.

En: Applied Physics Letters, Vol. 78, N.º 9, 26.02.2001, p. 1234-1236.

Resultado de la investigación: Article

TY - JOUR

T1 - Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation

AU - Britton, D. T.

AU - Barthe, M. F.

AU - Corbel, C.

AU - Hempel, A.

AU - Henry, L.

AU - Desgardin, P.

AU - Bauer-Kugelmann, W.

AU - Kögel, G.

AU - Sperr, P.

AU - Triftshäuser, W.

PY - 2001/2/26

Y1 - 2001/2/26

N2 - We have used pulsed-slow-positron-beam-based positron lifetime spectroscopy to investigate the nature of acceptors and charge states of vacancy-type defects in low-energy proton-implanted 6H-SiC(H). We can infer from the temperature dependence of the lifetime spectra that neutral and negatively charged vacancy clusters exist in the track region. Depending on annealing, they give rise to positron lifetimes of 257±2, 281±4, and 345±2 ps, respectively. The 281 ps cluster likely has an ionization level near the middle of the band gap. By comparison with theory, the 257 and 280 ps are identified as (VC-VSi)2 and (VC-VSi)3 clusters, respectively. In addition, other acceptors of ionic type act as strong trapping centers at low temperature (T<150 K). Neutral monovacancy-like complexes are also detected with a lifetime of 160±2 after 900 °C annealing.

AB - We have used pulsed-slow-positron-beam-based positron lifetime spectroscopy to investigate the nature of acceptors and charge states of vacancy-type defects in low-energy proton-implanted 6H-SiC(H). We can infer from the temperature dependence of the lifetime spectra that neutral and negatively charged vacancy clusters exist in the track region. Depending on annealing, they give rise to positron lifetimes of 257±2, 281±4, and 345±2 ps, respectively. The 281 ps cluster likely has an ionization level near the middle of the band gap. By comparison with theory, the 257 and 280 ps are identified as (VC-VSi)2 and (VC-VSi)3 clusters, respectively. In addition, other acceptors of ionic type act as strong trapping centers at low temperature (T<150 K). Neutral monovacancy-like complexes are also detected with a lifetime of 160±2 after 900 °C annealing.

UR - http://www.scopus.com/inward/record.url?scp=18044405147&partnerID=8YFLogxK

U2 - 10.1063/1.1350961

DO - 10.1063/1.1350961

M3 - Article

AN - SCOPUS:18044405147

VL - 78

SP - 1234

EP - 1236

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -