Diffusion-reaction mechanisms of nitriding species in SiO2

W. Orellana, Antônio J R Da Silva, A. Fazzio

Resultado de la investigación: Article

18 Citas (Scopus)

Resumen

We study using first-principles total-energy calculations, diffusion-reaction processes involved in the thermal nitridation of SiO 2. We consider NO, NH, N2, and atomic N in different charge states as the nitriding species in α-quartz. Our results show that none of neutral species react with the SiO2 network remaining at interstitial sites. Therefore, they are likely to diffuse through the oxide, incorporating nitrogen at near-interface (Si-SiO2) regions. Whereas, charged species are trapped by the network, nitriding bulk SiO2. For the diffusing species, we find that NH and atomic N show increasing diffusivities with temperatures, whereas for NO and N2 they are relatively constant. This result agrees well with the finding of higher N concentrations at the Si-SiO2 interface obtained by thermal processing of SiO2 in NH3 as compared with those obtained in N2O. Finally, we discuss spin-dependent incorporation reaction mechanisms of NH and atomic N with the SiO2 network.

Idioma originalEnglish
PublicaciónPhysical Review B - Condensed Matter and Materials Physics
Volumen70
N.º12
DOI
EstadoPublished - 1 sep 2004

Huella dactilar

nitriding
Nitriding
Quartz
Nitridation
Nitrogen oxides
nitrogen oxides
diffusivity
interstitials
quartz
Temperature
temperature
energy
Hot Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Citar esto

@article{49b48f808c67431a8c55815975d72818,
title = "Diffusion-reaction mechanisms of nitriding species in SiO2",
abstract = "We study using first-principles total-energy calculations, diffusion-reaction processes involved in the thermal nitridation of SiO 2. We consider NO, NH, N2, and atomic N in different charge states as the nitriding species in α-quartz. Our results show that none of neutral species react with the SiO2 network remaining at interstitial sites. Therefore, they are likely to diffuse through the oxide, incorporating nitrogen at near-interface (Si-SiO2) regions. Whereas, charged species are trapped by the network, nitriding bulk SiO2. For the diffusing species, we find that NH and atomic N show increasing diffusivities with temperatures, whereas for NO and N2 they are relatively constant. This result agrees well with the finding of higher N concentrations at the Si-SiO2 interface obtained by thermal processing of SiO2 in NH3 as compared with those obtained in N2O. Finally, we discuss spin-dependent incorporation reaction mechanisms of NH and atomic N with the SiO2 network.",
author = "W. Orellana and {Da Silva}, {Ant{\^o}nio J R} and A. Fazzio",
year = "2004",
month = "9",
day = "1",
doi = "10.1103/PhysRevB.70.125206",
language = "English",
volume = "70",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",

}

Diffusion-reaction mechanisms of nitriding species in SiO2. / Orellana, W.; Da Silva, Antônio J R; Fazzio, A.

En: Physical Review B - Condensed Matter and Materials Physics, Vol. 70, N.º 12, 01.09.2004.

Resultado de la investigación: Article

TY - JOUR

T1 - Diffusion-reaction mechanisms of nitriding species in SiO2

AU - Orellana, W.

AU - Da Silva, Antônio J R

AU - Fazzio, A.

PY - 2004/9/1

Y1 - 2004/9/1

N2 - We study using first-principles total-energy calculations, diffusion-reaction processes involved in the thermal nitridation of SiO 2. We consider NO, NH, N2, and atomic N in different charge states as the nitriding species in α-quartz. Our results show that none of neutral species react with the SiO2 network remaining at interstitial sites. Therefore, they are likely to diffuse through the oxide, incorporating nitrogen at near-interface (Si-SiO2) regions. Whereas, charged species are trapped by the network, nitriding bulk SiO2. For the diffusing species, we find that NH and atomic N show increasing diffusivities with temperatures, whereas for NO and N2 they are relatively constant. This result agrees well with the finding of higher N concentrations at the Si-SiO2 interface obtained by thermal processing of SiO2 in NH3 as compared with those obtained in N2O. Finally, we discuss spin-dependent incorporation reaction mechanisms of NH and atomic N with the SiO2 network.

AB - We study using first-principles total-energy calculations, diffusion-reaction processes involved in the thermal nitridation of SiO 2. We consider NO, NH, N2, and atomic N in different charge states as the nitriding species in α-quartz. Our results show that none of neutral species react with the SiO2 network remaining at interstitial sites. Therefore, they are likely to diffuse through the oxide, incorporating nitrogen at near-interface (Si-SiO2) regions. Whereas, charged species are trapped by the network, nitriding bulk SiO2. For the diffusing species, we find that NH and atomic N show increasing diffusivities with temperatures, whereas for NO and N2 they are relatively constant. This result agrees well with the finding of higher N concentrations at the Si-SiO2 interface obtained by thermal processing of SiO2 in NH3 as compared with those obtained in N2O. Finally, we discuss spin-dependent incorporation reaction mechanisms of NH and atomic N with the SiO2 network.

UR - http://www.scopus.com/inward/record.url?scp=19744381290&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.70.125206

DO - 10.1103/PhysRevB.70.125206

M3 - Article

AN - SCOPUS:19744381290

VL - 70

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 12

ER -