Defect characterisation of PECVD-grown diamond

D. T. Britton, A. Hempel, M. Hempel, M. Härting, W. Bauer-Kugelmann, W. Triftshäuser

Resultado de la investigación: Contribución a una revistaArtículo de la conferenciarevisión exhaustiva

Resumen

We present the results of a combined study of the defect structure and residual stress in a diamond layer, grown by PECVD on a polycrystalline copper substrate with a titanium interlayer. For the defect studies, both continuous and pulsed positron beam techniques were applied. X-ray diffraction techniques were used for both the stress determination in the diamond layer and for a phase analysis of the complete composite structure. The layer was found to contain a significant fraction of vacancy clusters and single vacancy type defects, situated within the individual grains. The presence of the larger defects can be correlated to a compressive stress in the layer.

Idioma originalInglés
Páginas (desde-hasta)511-513
Número de páginas3
PublicaciónMaterials Science Forum
Volumen363-365
DOI
EstadoPublicada - 2001
Evento12th International Conference on Positron Annihilation - Munchen, Alemania
Duración: 6 ago 200012 ago 2000

Áreas temáticas de ASJC Scopus

  • Ciencia de los materiales (todo)
  • Física de la materia condensada
  • Mecánica de materiales
  • Ingeniería mecánica

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