Comparative study of defect energetics in HfO2 and SiO 2

W. L. Scopel, Antônio J R Da Silva, W. Orellana, A. Fazzio

Resultado de la investigación: Contribución a una revistaArtículo

113 Citas (Scopus)

Resumen

The substitutional and valency defects in the monoclinic hafnium oxide and α-quartz were discussed. The formation of Si substitiutional defects in HfO2 and Hf substitutional defect in SiO2 were studied. It was found that the formation Si substitutional defects lead to the formation of a silicate-like layer close to the interface. Results show that the silicate layer at the HfO2/Si interface were energetically favorable to form oxygen vacancies in SiO2 than in HfO2.

Idioma originalInglés
Páginas (desde-hasta)1492-1494
Número de páginas3
PublicaciónApplied Physics Letters
Volumen84
N.º9
DOI
EstadoPublicada - 1 mar 2004

Áreas temáticas de ASJC Scopus

  • Física y astronomía (miscelánea)

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