Comparative study of defect energetics in HfO2 and SiO 2

W. L. Scopel, Antônio J R Da Silva, W. Orellana, A. Fazzio

Resultado de la investigación: Article

112 Citas (Scopus)

Resumen

The substitutional and valency defects in the monoclinic hafnium oxide and α-quartz were discussed. The formation of Si substitiutional defects in HfO2 and Hf substitutional defect in SiO2 were studied. It was found that the formation Si substitutional defects lead to the formation of a silicate-like layer close to the interface. Results show that the silicate layer at the HfO2/Si interface were energetically favorable to form oxygen vacancies in SiO2 than in HfO2.

Idioma originalEnglish
Páginas (desde-hasta)1492-1494
Número de páginas3
PublicaciónApplied Physics Letters
Volumen84
N.º9
DOI
EstadoPublished - 1 mar 2004

Huella dactilar

defects
silicates
hafnium oxides
quartz
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Citar esto

Scopel, W. L. ; Da Silva, Antônio J R ; Orellana, W. ; Fazzio, A. / Comparative study of defect energetics in HfO2 and SiO 2. En: Applied Physics Letters. 2004 ; Vol. 84, N.º 9. pp. 1492-1494.
@article{6df24d700f9b485b9200e7ea42937feb,
title = "Comparative study of defect energetics in HfO2 and SiO 2",
abstract = "The substitutional and valency defects in the monoclinic hafnium oxide and α-quartz were discussed. The formation of Si substitiutional defects in HfO2 and Hf substitutional defect in SiO2 were studied. It was found that the formation Si substitutional defects lead to the formation of a silicate-like layer close to the interface. Results show that the silicate layer at the HfO2/Si interface were energetically favorable to form oxygen vacancies in SiO2 than in HfO2.",
author = "Scopel, {W. L.} and {Da Silva}, {Ant{\^o}nio J R} and W. Orellana and A. Fazzio",
year = "2004",
month = "3",
day = "1",
doi = "10.1063/1.1650874",
language = "English",
volume = "84",
pages = "1492--1494",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "9",

}

Comparative study of defect energetics in HfO2 and SiO 2. / Scopel, W. L.; Da Silva, Antônio J R; Orellana, W.; Fazzio, A.

En: Applied Physics Letters, Vol. 84, N.º 9, 01.03.2004, p. 1492-1494.

Resultado de la investigación: Article

TY - JOUR

T1 - Comparative study of defect energetics in HfO2 and SiO 2

AU - Scopel, W. L.

AU - Da Silva, Antônio J R

AU - Orellana, W.

AU - Fazzio, A.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - The substitutional and valency defects in the monoclinic hafnium oxide and α-quartz were discussed. The formation of Si substitiutional defects in HfO2 and Hf substitutional defect in SiO2 were studied. It was found that the formation Si substitutional defects lead to the formation of a silicate-like layer close to the interface. Results show that the silicate layer at the HfO2/Si interface were energetically favorable to form oxygen vacancies in SiO2 than in HfO2.

AB - The substitutional and valency defects in the monoclinic hafnium oxide and α-quartz were discussed. The formation of Si substitiutional defects in HfO2 and Hf substitutional defect in SiO2 were studied. It was found that the formation Si substitutional defects lead to the formation of a silicate-like layer close to the interface. Results show that the silicate layer at the HfO2/Si interface were energetically favorable to form oxygen vacancies in SiO2 than in HfO2.

UR - http://www.scopus.com/inward/record.url?scp=1642588409&partnerID=8YFLogxK

U2 - 10.1063/1.1650874

DO - 10.1063/1.1650874

M3 - Article

AN - SCOPUS:1642588409

VL - 84

SP - 1492

EP - 1494

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -