Carbon nanotube adsorbed on hydrogenated Si(0 0 1) surfaces

R. H. Miwa, W. Orellana, A. Fazzio

Resultado de la investigación: Contribución a una revistaArtículo de la conferencia

7 Citas (Scopus)

Resumen

The structural and electronic properties of a metallic single-walled carbon nanotube (CNT), adsorbed on hydrogenated Si(0 0 1) surfaces, have been investigated by first-principles calculations. We find that the electronic properties of the adsorbed CNT can be ruled by the H concentration along the CNT-H/Si(0 0 1) contact region. (i) On the fully hydrogenated Si(0 0 1), the CNT is physisorbed, preserving almost unchanged its metallic character. (ii) Removing half the H atoms along the adsorption site, we find an enhancement on the metallicity of the adsorbed CNT. (iii) When all the H atoms along the adsorption site are removed, the adsorbed CNT becomes semiconducting, exhibiting an energy gap. These results suggest that metallic CNTs adsorbed on H/Si(0 0 1) could be transformed into metal-semiconductor junctions by grading the H concentration along the CNT-surface interface.

Idioma originalInglés
Páginas (desde-hasta)124-128
Número de páginas5
PublicaciónApplied Surface Science
Volumen244
N.º1-4
DOI
EstadoPublicada - 15 may 2005
Evento12th International Conference on Solid Films and Surfaces - Hammatsu, Japón
Duración: 21 jun 200425 jun 2004

Áreas temáticas de ASJC Scopus

  • Química física y teórica
  • Superficies, recubrimientos y láminas
  • Física de la materia condensada

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