Resumen
The structural and electronic properties of a metallic single-walled carbon nanotube (CNT), adsorbed on hydrogenated Si(0 0 1) surfaces, have been investigated by first-principles calculations. We find that the electronic properties of the adsorbed CNT can be ruled by the H concentration along the CNT-H/Si(0 0 1) contact region. (i) On the fully hydrogenated Si(0 0 1), the CNT is physisorbed, preserving almost unchanged its metallic character. (ii) Removing half the H atoms along the adsorption site, we find an enhancement on the metallicity of the adsorbed CNT. (iii) When all the H atoms along the adsorption site are removed, the adsorbed CNT becomes semiconducting, exhibiting an energy gap. These results suggest that metallic CNTs adsorbed on H/Si(0 0 1) could be transformed into metal-semiconductor junctions by grading the H concentration along the CNT-surface interface.
Idioma original | Inglés |
---|---|
Páginas (desde-hasta) | 124-128 |
Número de páginas | 5 |
Publicación | Applied Surface Science |
Volumen | 244 |
N.º | 1-4 |
DOI | |
Estado | Publicada - 15 may. 2005 |
Evento | 12th International Conference on Solid Films and Surfaces - Hammatsu, Japón Duración: 21 jun. 2004 → 25 jun. 2004 |
Áreas temáticas de ASJC Scopus
- Química (todo)
- Física de la materia condensada
- Física y astronomía (todo)
- Superficies e interfaces
- Superficies, recubrimientos y láminas