Atomic-scale imaging of polarization switching in an (anti-)ferroelectric memory material: Zirconia (ZrO2)

S. Lombardo, C. Nelson, K. Chae, S. Reyes-Lillo, M. Tian, N. Tasneem, Z. Wang, M. Hoffmann, D. Triyoso, S. Consiglio, K. Tapily, R. Clark, G. Leusink, K. Cho, A. Kummel, J. Kacher, A. Khan

Resultado de la investigación: Contribución a los tipos de informe/libroContribución a la conferenciarevisión exhaustiva

2 Citas (Scopus)

Resumen

Direct, atomic-scale visualization of polarization switching in a functional, polycrystalline, binary oxide via insitu high-resolution transmission electron microscopy (HRTEM) biasing is reported for the first time. Antiferroelectric (AFE) ZrO2 was used as the model system, which is important for commercial DRAMs and as emerging NVMs (through work-function engineering). We observed (1) clear shifting and coalescing of domains within a single grain, and (2) dramatic changes of the atomic arrangements and crystalline phases-both at voltages above the critical voltage measured for AFE switching. Similar synergistic in-situ structural-electrical characterization can pave the way to understand and engineer microscopic mechanisms for retention, fatigue, variability, sub-coercive switching and analog states in ferroelectric and AFE-based memory devices.

Idioma originalInglés
Título de la publicación alojada2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781728164601
DOI
EstadoPublicada - jun 2020
Publicado de forma externa
Evento2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Honolulu, Estados Unidos
Duración: 16 jun 202019 jun 2020

Serie de la publicación

NombreDigest of Technical Papers - Symposium on VLSI Technology
Volumen2020-June
ISSN (versión impresa)0743-1562

Conferencia

Conferencia2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020
País/TerritorioEstados Unidos
CiudadHonolulu
Período16/06/2019/06/20

Áreas temáticas de ASJC Scopus

  • Ingeniería eléctrica y electrónica

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