Atomic geometry and energetics of native defects in cubic boron nitride

W. Orellana, H. Chacham

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

7 Citas (Scopus)

Resumen

We use first-principles calculations to investigate the electronic structure, atomic geometries and formation energies of point vacancies (VB, VN), antisites (BN, NB) and interstitials (Bi, Ni) in cubic boron nitride (c-BN). We find that nitrogen and boron vacancies exhibit the lowest formation energies in nonstoichiometric c-BN for p-type and n-type conditions, respectively, showing intrinsic donor (VB) and acceptor (VN) characters. The equilibrium geometries show large outward breathing relaxations for both vacancies and for BN, with slight Jahn-Teller distortions from Td symmetry. For NB we find an off-center distortion inducing a negative-U behavior in this center. For both interstitial centers we find stable configurations in which an atomic pair occupies a nitrogen site in the lattice, N-N for Ni and N-B for Bi. These systems are stable for the different charge states investigated.

Idioma originalInglés
Páginas (desde-hasta)801-805
Número de páginas5
PublicaciónBrazilian Journal of Physics
Volumen29
N.º4
DOI
EstadoPublicada - dic 1999

Áreas temáticas de ASJC Scopus

  • Física y astronomía (todo)

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