Annealing and recrystallization of hydrogenated amorphous silicon

D. T. Britton, A. Hempel, M. Härting

Resultado de la investigación: Article

32 Citas (Scopus)

Resumen

Using a combination of positron annihilation and x-ray-diffraction techniques, we have shown that low hydrogen concentration hot wire chemical vapor deposition grown a-Si:H forms a continuous random network with no detectable free volume in the form of microvoids, and no evidence of a microcrystalline phase. On annealing up to 400 °C, the amorphous network is seen to relax and the first stages of recrystallization occur. There is also evidence of vacancy clustering to form a low concentration of microvoids. The structural relaxation has a very low activation energy, around 0.1 eV, and is probably caused by a reconfiguration of hydrogen-terminated dangling, bond defects. The formation of microvoids and the recrystallization can both be interpreted by the migration of unterminated dangling-bond defects.

Idioma originalEnglish
Número de artículo075403
Páginas (desde-hasta)754031-754038
Número de páginas8
PublicaciónPhysical Review B - Condensed Matter and Materials Physics
Volumen64
N.º7
EstadoPublished - 15 ago 2001

Huella dactilar

Dangling bonds
Amorphous silicon
amorphous silicon
Hydrogen
Annealing
Defects
Structural relaxation
annealing
Positron annihilation
Free volume
defects
hydrogen
positron annihilation
Vacancies
low concentrations
Chemical vapor deposition
x ray diffraction
Activation energy
Diffraction
vapor deposition

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Citar esto

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Annealing and recrystallization of hydrogenated amorphous silicon. / Britton, D. T.; Hempel, A.; Härting, M.

En: Physical Review B - Condensed Matter and Materials Physics, Vol. 64, N.º 7, 075403, 15.08.2001, p. 754031-754038.

Resultado de la investigación: Article

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AU - Härting, M.

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