Structural characterization of hydrogenated a-Si using slow positron beam techniques

D. T. Britton, A. Hempel, D. Knoesen, W. Bauer-Kugelmann, W. Triftshäuser

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)


Hydrogenated amorphous silicon (a-Si:H) grown by hot wire chemical vapour deposition is a promising candidate for robust inexpensive solar cells. However, prolonged exposure to light is known to lead to a reduction in efficiency of a-Si:H devices. The causes for this ageing effect are still unclear, but may be related to a structural relaxation or change in hydrogen content. In this work, results are presented for positron beam studies of the defect structure, using both lifetime and Doppler-broadening spectroscopy, of a-Si:H grown under different conditions.

Original languageEnglish
Pages (from-to)1010-1015
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - 1 Jan 2000
EventICACS-18: 18th International Conference on Atomic Collisions in Solids - Odense, Denmark
Duration: 3 Aug 19998 Aug 1999

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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