Structural characterization of hydrogenated a-Si using slow positron beam techniques

D. T. Britton; A. Hempel; D. Knoesen; W. Bauer-Kugelmann; W. Triftshäuser

doi:10.1016/S0168-583X(99)01053-8

Structural characterization of hydrogenated a-Si using slow positron beam techniques

D. T. Britton, A. Hempel, D. Knoesen, W. Bauer-Kugelmann, W. Triftshäuser

Exact Sciences School

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Hydrogenated amorphous silicon (a-Si:H) grown by hot wire chemical vapour deposition is a promising candidate for robust inexpensive solar cells. However, prolonged exposure to light is known to lead to a reduction in efficiency of a-Si:H devices. The causes for this ageing effect are still unclear, but may be related to a structural relaxation or change in hydrogen content. In this work, results are presented for positron beam studies of the defect structure, using both lifetime and Doppler-broadening spectroscopy, of a-Si:H grown under different conditions.

Original language	English
Pages (from-to)	1010-1015
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	164
DOIs	https://doi.org/10.1016/S0168-583X(99)01053-8
Publication status	Published - 1 Jan 2000
Event	ICACS-18: 18th International Conference on Atomic Collisions in Solids - Odense, Denmark Duration: 3 Aug 1999 → 8 Aug 1999

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/S0168-583X(99)01053-8

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title = "Structural characterization of hydrogenated a-Si using slow positron beam techniques",

abstract = "Hydrogenated amorphous silicon (a-Si:H) grown by hot wire chemical vapour deposition is a promising candidate for robust inexpensive solar cells. However, prolonged exposure to light is known to lead to a reduction in efficiency of a-Si:H devices. The causes for this ageing effect are still unclear, but may be related to a structural relaxation or change in hydrogen content. In this work, results are presented for positron beam studies of the defect structure, using both lifetime and Doppler-broadening spectroscopy, of a-Si:H grown under different conditions.",

author = "Britton, {D. T.} and A. Hempel and D. Knoesen and W. Bauer-Kugelmann and W. Triftsh{\"a}user",

year = "2000",

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doi = "10.1016/S0168-583X(99)01053-8",

language = "English",

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journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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note = "ICACS-18: 18th International Conference on Atomic Collisions in Solids ; Conference date: 03-08-1999 Through 08-08-1999",

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TY - JOUR

T1 - Structural characterization of hydrogenated a-Si using slow positron beam techniques

AU - Britton, D. T.

AU - Hempel, A.

AU - Knoesen, D.

AU - Bauer-Kugelmann, W.

AU - Triftshäuser, W.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Hydrogenated amorphous silicon (a-Si:H) grown by hot wire chemical vapour deposition is a promising candidate for robust inexpensive solar cells. However, prolonged exposure to light is known to lead to a reduction in efficiency of a-Si:H devices. The causes for this ageing effect are still unclear, but may be related to a structural relaxation or change in hydrogen content. In this work, results are presented for positron beam studies of the defect structure, using both lifetime and Doppler-broadening spectroscopy, of a-Si:H grown under different conditions.

AB - Hydrogenated amorphous silicon (a-Si:H) grown by hot wire chemical vapour deposition is a promising candidate for robust inexpensive solar cells. However, prolonged exposure to light is known to lead to a reduction in efficiency of a-Si:H devices. The causes for this ageing effect are still unclear, but may be related to a structural relaxation or change in hydrogen content. In this work, results are presented for positron beam studies of the defect structure, using both lifetime and Doppler-broadening spectroscopy, of a-Si:H grown under different conditions.

UR - http://www.scopus.com/inward/record.url?scp=0033748627&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(99)01053-8

DO - 10.1016/S0168-583X(99)01053-8

M3 - Conference article

AN - SCOPUS:0033748627

SN - 0168-583X

VL - 164

SP - 1010

EP - 1015

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - ICACS-18: 18th International Conference on Atomic Collisions in Solids

Y2 - 3 August 1999 through 8 August 1999

ER -

Structural characterization of hydrogenated a-Si using slow positron beam techniques

Abstract

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