Stability and electronic structure of hydrogen-nitrogen complexes in GaAs

W. Orellana; A. C. Ferraz

doi:10.1063/1.1521571

Stability and electronic structure of hydrogen-nitrogen complexes in GaAs

W. Orellana, A. C. Ferraz

Exact Sciences School

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Stability and electronic structure of hydrogen-nitrogen complexes were investigated in gallium arsenide. The formation of strong N_As-H bond was found when a single hydrogen atom was incorporated in the lowest-energy bond centered (BC) position. The electronic structure of this complex showed the passivation of the gap level restoring the GaAs band gap.

Original language	English
Pages (from-to)	3816-3818
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	20
DOIs	https://doi.org/10.1063/1.1521571
Publication status	Published - 11 Nov 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1521571

Cite this

@article{894d287410924e25b80eaa1dc43c4905,

title = "Stability and electronic structure of hydrogen-nitrogen complexes in GaAs",

abstract = "Stability and electronic structure of hydrogen-nitrogen complexes were investigated in gallium arsenide. The formation of strong NAs-H bond was found when a single hydrogen atom was incorporated in the lowest-energy bond centered (BC) position. The electronic structure of this complex showed the passivation of the gap level restoring the GaAs band gap.",

author = "W. Orellana and Ferraz, {A. C.}",

year = "2002",

month = nov,

day = "11",

doi = "10.1063/1.1521571",

language = "English",

volume = "81",

pages = "3816--3818",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Stability and electronic structure of hydrogen-nitrogen complexes in GaAs

AU - Orellana, W.

AU - Ferraz, A. C.

PY - 2002/11/11

Y1 - 2002/11/11

N2 - Stability and electronic structure of hydrogen-nitrogen complexes were investigated in gallium arsenide. The formation of strong NAs-H bond was found when a single hydrogen atom was incorporated in the lowest-energy bond centered (BC) position. The electronic structure of this complex showed the passivation of the gap level restoring the GaAs band gap.

AB - Stability and electronic structure of hydrogen-nitrogen complexes were investigated in gallium arsenide. The formation of strong NAs-H bond was found when a single hydrogen atom was incorporated in the lowest-energy bond centered (BC) position. The electronic structure of this complex showed the passivation of the gap level restoring the GaAs band gap.

UR - http://www.scopus.com/inward/record.url?scp=0037065142&partnerID=8YFLogxK

U2 - 10.1063/1.1521571

DO - 10.1063/1.1521571

M3 - Article

AN - SCOPUS:0037065142

SN - 0003-6951

VL - 81

SP - 3816

EP - 3818

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Stability and electronic structure of hydrogen-nitrogen complexes in GaAs

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this