Sn-doped CdTe as promising intermediate-band photovoltaic material

Mauricio A. Flores, Eduardo Men�ndez-Proupin, Walter Orellana, Juan L. Peǹa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The formation energies, charge transition levels and quasiparticle defect states of several tin-related impurities are investigated within the DFT + GW formalism. The optical spectrum obtained from the solution of the Bethe-Salpeter equation shows that the absorption strongly increases in the sub-bandgap region after doping, suggesting a two-step photoexcitation process that facilitates transitions from photons with insufficient energy to cause direct transitions from the valence to the conduction band via an intermediate-band. We propose Sn-doped CdTe as a promising candidate for the development of high-efficiency solar cells, which could potentially overcome the Shockley-Queisser limit.

Original languageEnglish
Article number035501
JournalJournal of Physics D: Applied Physics
Volume50
Issue number3
DOIs
Publication statusPublished - 25 Jan 2017

Keywords

  • CdTe
  • intermediate-band
  • photovoltaics
  • solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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