Pulsed positron beam study of as-grown defects in epitaxial SiC

D. T. Britton, D. Gxawu, A. Hempel, M. F. Barthe, L. Henry, P. Desgardin, C. Corbel, W. Bauer-Kugelmann, P. Sperr, G. Kögel, W. Triftshäuser

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We have used slow positron beam based positron lifetime spectroscopy to study positron diffusion in a thick epitaxial n-type 6H-SiC. The layer is considerably thicker than the maximum positron penetration depth, and can therefore be treated as homogeneous semi-infinite bulk material in an analysis including the time-dependent diffusion of a single group of probe particles. Temperature dependent measurements show a reduction in the positron diffusivity below 100K, which can be interpreted by an increase in trapping to shallow defect states. Above this temperature, the behaviour of the diffusivity is consistent with the expected T1/2 dependence due to acoustic phonon scattering.

Original languageEnglish
Pages (from-to)460-462
Number of pages3
JournalMaterials Science Forum
Publication statusPublished - 2001
Event12th International Conference on Positron Annihilation - Munchen, Germany
Duration: 6 Aug 200012 Aug 2000


  • Positron diffusion
  • Pulsed beams
  • Shallow traps
  • SiC

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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