Modeling crack patterns by modified stit tessellations

Roberto León, Werner Nagel, Joachim Ohser, Steve Arscott

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Random planar tessellations are presented which are generated by subsequent division of their polygonal cells. The purpose is to develop parametric models for crack patterns appearing at length scales which can change by orders of magnitude in areas such as nanotechnology, materials science, soft matter, and geology. Using the STIT tessellation as a reference model and comparing with phenomena in real crack patterns, three modifications of STIT are suggested. For all these models a simulation tool, which also yields several statistics for the tessellation cells, is provided on the web. The software is freely available via a link given in the bibliography of this article. The present paper contains results of a simulation study indicating some essential features of the models. Finally, an example of a real fracture pattern is considered which is obtained using the deposition of a thin metallic film onto an elastomer material-the results of this are compared to the predictions of the model.

Original languageEnglish
Article number2245
Pages (from-to)33-46
Number of pages14
JournalImage Analysis and Stereology
Issue number1
Publication statusPublished - 2020


  • Fracture pattern
  • Geometry-statistics
  • Monte Carlo simulation
  • Random tessellation
  • STIT tessellation

ASJC Scopus subject areas

  • Biotechnology
  • Signal Processing
  • General Mathematics
  • Materials Science (miscellaneous)
  • Instrumentation
  • Radiology Nuclear Medicine and imaging
  • Acoustics and Ultrasonics
  • Computer Vision and Pattern Recognition


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