TY - JOUR
T1 - Inducing a level inside of CdTe bandgap doping with Sn using a co-sublimation technique by CSS
AU - Ríos-González, J. A.
AU - Mis-Fernández, R.
AU - Camacho-Espinosa, E.
AU - Riech, I.
AU - Menéndez-Proupin, E.
AU - Flores, M. A.
AU - Orellana, W.
AU - Peña, J. L.
N1 - Funding Information:
This work has been supported by CONACYT-SENER (M?xico) under projects CeMiE-Sol 207450/P25 and Consolidaci?n del Laboratorio de Energ?a Renovable del Sureste (LENERSE) 254667 (M?xico). Measurements were performed at LANNBIO CINVESTAV-IPN M?rida under projects FOMIX-Yucat?n 2008?108160, CONACYT LAB-2009-01-123913, 292692, 294643, 188345?y 204822 (M?xico). The authors thank to W. Cauich, J. Bante, and D. Quintanilla for technical assistant. W. O. acknowledges support from CONICYT/FONDECYT (Chile), through Grant No. 1170480. E. M-P acknowledges support from grant CONICYT/FONDECYT (Chile) Regular 1171807. Powered@NLHPC: This research was partially supported by the supercomputing infrastructure of the NLHPC (ECM-02) (Chile). J. A. R-G acknowledges financial support from CONACyT (M?xico) for the scholarship.
Funding Information:
This work has been supported by CONACYT-SENER (México) under projects CeMiE-Sol 207450/P25 and Consolidación del Laboratorio de Energía Renovable del Sureste (LENERSE) 254667 (México). Measurements were performed at LANNBIO CINVESTAV-IPN Mérida under projects FOMIX-Yucatán 2008–108160, CONACYT LAB-2009-01-123913, 292692, 294643, 188345 y 204822 (México). The authors thank to W. Cauich, J. Bante, and D. Quintanilla for technical assistant. W. O. acknowledges support from CONICYT / FONDECYT (Chile), through Grant No. 1170480 . E. M-P acknowledges support from grant CONICYT / FONDECYT (Chile) Regular 1171807 . Powered@NLHPC: This research was partially supported by the supercomputing infrastructure of the NLHPC ( ECM-02 ) (Chile). J. A. R-G acknowledges financial support from CONACyT (México) for the scholarship.
Publisher Copyright:
© 2019
PY - 2020/3/1
Y1 - 2020/3/1
N2 - In this work, cadmium telluride (CdTe) thin films were doped with Sn using a low-cost co-sublimation technique by a homemade close-spaced sublimation (CSS) system. Sn amount was calculated to obtain CdTe film doped with a percentage content lower than 0.4 at%. Chemical, structural, morphological, and optical properties of the as-deposited CdTe (u-CdTe) and Sn-doped CdTe (t-CdTe) films were measured and compared. Raman and XPS characterization showed the presence of Sn in t-CdTe thin films and XRD analysis revealed a strong signal related to CdTe planes (220) and (311) and in a lesser extent a signal related to SnTe. Irregular shaped grains with similar size related to Sn incorporation in the films were found with FE-SEM technique. Photoluminescence spectrum indicates an energy band at 0.7 eV, generating a band inside of CdTe bandgap, due to defects induced by the Sn in CdTe lattice, matching with a theoretical study. The changes observed in Sn doped CdTe film suggest that it can be used for optoelectronics applications.
AB - In this work, cadmium telluride (CdTe) thin films were doped with Sn using a low-cost co-sublimation technique by a homemade close-spaced sublimation (CSS) system. Sn amount was calculated to obtain CdTe film doped with a percentage content lower than 0.4 at%. Chemical, structural, morphological, and optical properties of the as-deposited CdTe (u-CdTe) and Sn-doped CdTe (t-CdTe) films were measured and compared. Raman and XPS characterization showed the presence of Sn in t-CdTe thin films and XRD analysis revealed a strong signal related to CdTe planes (220) and (311) and in a lesser extent a signal related to SnTe. Irregular shaped grains with similar size related to Sn incorporation in the films were found with FE-SEM technique. Photoluminescence spectrum indicates an energy band at 0.7 eV, generating a band inside of CdTe bandgap, due to defects induced by the Sn in CdTe lattice, matching with a theoretical study. The changes observed in Sn doped CdTe film suggest that it can be used for optoelectronics applications.
KW - Closed-spaced sublimation
KW - Doping
KW - Intermediate band
KW - Low-cost
UR - http://www.scopus.com/inward/record.url?scp=85074904383&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2019.104836
DO - 10.1016/j.mssp.2019.104836
M3 - Article
AN - SCOPUS:85074904383
SN - 1369-8001
VL - 107
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 104836
ER -