Hopping transport of positrons in hydrogenated amorphous silicon

D. T. Britton, A. Hempel, W. Triftshäuser

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Abstract

Positron diffusion was investigated in hydrogenated amorphous silicon using positron beam timing spectroscopy. The measurement of the rate of emission of annihilation photons as a function of the time interval between annihilation and incoming pulse of positrons, allowed the measurement of positron lifetime spectrum at different depths. The results indicated that the dominant positron state in a particular covalent random network was a localized state located at hydrogen terminated dangling bond defects. Hopping diffusion of positrons was observed and the migration enthalpy for positrons in that state was found to be 17.7(3) meV.

Original languageEnglish
Article number217401
Pages (from-to)2174011-2174014
Number of pages4
JournalPhysical Review Letters
Volume87
Issue number21
Publication statusPublished - 19 Nov 2001

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Britton, D. T., Hempel, A., & Triftshäuser, W. (2001). Hopping transport of positrons in hydrogenated amorphous silicon. Physical Review Letters, 87(21), 2174011-2174014. [217401].