Defect characterisation of PECVD-grown diamond

D. T. Britton, A. Hempel, M. Hempel, M. Härting, W. Bauer-Kugelmann, W. Triftshäuser

Research output: Contribution to journalConference articlepeer-review

Abstract

We present the results of a combined study of the defect structure and residual stress in a diamond layer, grown by PECVD on a polycrystalline copper substrate with a titanium interlayer. For the defect studies, both continuous and pulsed positron beam techniques were applied. X-ray diffraction techniques were used for both the stress determination in the diamond layer and for a phase analysis of the complete composite structure. The layer was found to contain a significant fraction of vacancy clusters and single vacancy type defects, situated within the individual grains. The presence of the larger defects can be correlated to a compressive stress in the layer.

Original languageEnglish
Pages (from-to)511-513
Number of pages3
JournalMaterials Science Forum
Volume363-365
DOIs
Publication statusPublished - 2001
Event12th International Conference on Positron Annihilation - Munchen, Germany
Duration: 6 Aug 200012 Aug 2000

Keywords

  • CVD diamond
  • Defect profile
  • Residual stress
  • X-ray diffraction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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