Comparative study of defect energetics in HfO2 and SiO 2

W. L. Scopel; Antônio J.R. Da Silva; W. Orellana; A. Fazzio

doi:10.1063/1.1650874

Comparative study of defect energetics in HfO₂ and SiO ₂

W. L. Scopel, Antônio J.R. Da Silva, W. Orellana, A. Fazzio

Exact Sciences School

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122 Citations (Scopus)

Abstract

The substitutional and valency defects in the monoclinic hafnium oxide and α-quartz were discussed. The formation of Si substitiutional defects in HfO₂ and Hf substitutional defect in SiO₂ were studied. It was found that the formation Si substitutional defects lead to the formation of a silicate-like layer close to the interface. Results show that the silicate layer at the HfO₂/Si interface were energetically favorable to form oxygen vacancies in SiO₂ than in HfO₂.

Original language	English
Pages (from-to)	1492-1494
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	9
DOIs	https://doi.org/10.1063/1.1650874
Publication status	Published - 1 Mar 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1650874

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abstract = "The substitutional and valency defects in the monoclinic hafnium oxide and α-quartz were discussed. The formation of Si substitiutional defects in HfO2 and Hf substitutional defect in SiO2 were studied. It was found that the formation Si substitutional defects lead to the formation of a silicate-like layer close to the interface. Results show that the silicate layer at the HfO2/Si interface were energetically favorable to form oxygen vacancies in SiO2 than in HfO2.",

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AU - Fazzio, A.

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N2 - The substitutional and valency defects in the monoclinic hafnium oxide and α-quartz were discussed. The formation of Si substitiutional defects in HfO2 and Hf substitutional defect in SiO2 were studied. It was found that the formation Si substitutional defects lead to the formation of a silicate-like layer close to the interface. Results show that the silicate layer at the HfO2/Si interface were energetically favorable to form oxygen vacancies in SiO2 than in HfO2.

AB - The substitutional and valency defects in the monoclinic hafnium oxide and α-quartz were discussed. The formation of Si substitiutional defects in HfO2 and Hf substitutional defect in SiO2 were studied. It was found that the formation Si substitutional defects lead to the formation of a silicate-like layer close to the interface. Results show that the silicate layer at the HfO2/Si interface were energetically favorable to form oxygen vacancies in SiO2 than in HfO2.

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Comparative study of defect energetics in HfO₂ and SiO ₂

Abstract

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