Comparative study of defect energetics in HfO2 and SiO 2

W. L. Scopel, Antônio J R Da Silva, W. Orellana, A. Fazzio

Research output: Contribution to journalArticle

113 Citations (Scopus)

Abstract

The substitutional and valency defects in the monoclinic hafnium oxide and α-quartz were discussed. The formation of Si substitiutional defects in HfO2 and Hf substitutional defect in SiO2 were studied. It was found that the formation Si substitutional defects lead to the formation of a silicate-like layer close to the interface. Results show that the silicate layer at the HfO2/Si interface were energetically favorable to form oxygen vacancies in SiO2 than in HfO2.

Original languageEnglish
Pages (from-to)1492-1494
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number9
DOIs
Publication statusPublished - 1 Mar 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Comparative study of defect energetics in HfO2 and SiO 2'. Together they form a unique fingerprint.

  • Cite this