Annealing effects in hydrogenated amorphous silicon layers

A. Hempel, A. Dabrowski, M. Härting, M. Hempel, D. Knoesen, W. Bauer-Kugelmann, G. Kögel, W. Triftshäuser, D. T. Britton

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


The annealing behaviour of defect structures in hydrogenated amorphous silicon, produced by hot wire chemical vapour deposition (HWCVD) has been studied by pulsed and conventional positron beam techniques and X-ray diffraction. Positron lifetime measurements show a dominant component corresponding to small vacancy clusters. Doppler Broadening measurements indicate that the size and concentration of defects varies with annealing temperatures up to 400°C. This behaviour is accompanied by a change from the amorphous to a partly crystalline structure, which can be observed by X-ray diffraction studies.

Original languageEnglish
Pages (from-to)463-465
Number of pages3
JournalMaterials Science Forum
Publication statusPublished - 2001
Event12th International Conference on Positron Annihilation - Munchen, Germany
Duration: 6 Aug 200012 Aug 2000


  • Crystallisation
  • Electron momentum
  • Hydrogenated amorphous silicon
  • Positron lifetime
  • X-ray diffraction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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