Annealing effects in hydrogenated amorphous silicon layers

A. Hempel; A. Dabrowski; M. Härting; M. Hempel; D. Knoesen; W. Bauer-Kugelmann; G. Kögel; W. Triftshäuser; D. T. Britton

doi:10.4028/www.scientific.net/msf.363-365.463

Annealing effects in hydrogenated amorphous silicon layers

A. Hempel, A. Dabrowski, M. Härting, M. Hempel, D. Knoesen, W. Bauer-Kugelmann, G. Kögel, W. Triftshäuser, D. T. Britton

Exact Sciences School

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

The annealing behaviour of defect structures in hydrogenated amorphous silicon, produced by hot wire chemical vapour deposition (HWCVD) has been studied by pulsed and conventional positron beam techniques and X-ray diffraction. Positron lifetime measurements show a dominant component corresponding to small vacancy clusters. Doppler Broadening measurements indicate that the size and concentration of defects varies with annealing temperatures up to 400°C. This behaviour is accompanied by a change from the amorphous to a partly crystalline structure, which can be observed by X-ray diffraction studies.

Original language	English
Pages (from-to)	463-465
Number of pages	3
Journal	Materials Science Forum
Volume	363-365
DOIs	https://doi.org/10.4028/www.scientific.net/msf.363-365.463
Publication status	Published - 2001
Event	12th International Conference on Positron Annihilation - Munchen, Germany Duration: 6 Aug 2000 → 12 Aug 2000

Keywords

Crystallisation
Electron momentum
Hydrogenated amorphous silicon
Positron lifetime
X-ray diffraction

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

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title = "Annealing effects in hydrogenated amorphous silicon layers",

abstract = "The annealing behaviour of defect structures in hydrogenated amorphous silicon, produced by hot wire chemical vapour deposition (HWCVD) has been studied by pulsed and conventional positron beam techniques and X-ray diffraction. Positron lifetime measurements show a dominant component corresponding to small vacancy clusters. Doppler Broadening measurements indicate that the size and concentration of defects varies with annealing temperatures up to 400°C. This behaviour is accompanied by a change from the amorphous to a partly crystalline structure, which can be observed by X-ray diffraction studies.",

keywords = "Crystallisation, Electron momentum, Hydrogenated amorphous silicon, Positron lifetime, X-ray diffraction",

author = "A. Hempel and A. Dabrowski and M. H{\"a}rting and M. Hempel and D. Knoesen and W. Bauer-Kugelmann and G. K{\"o}gel and W. Triftsh{\"a}user and Britton, {D. T.}",

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TY - JOUR

T1 - Annealing effects in hydrogenated amorphous silicon layers

AU - Hempel, A.

AU - Dabrowski, A.

AU - Härting, M.

AU - Hempel, M.

AU - Knoesen, D.

AU - Bauer-Kugelmann, W.

AU - Kögel, G.

AU - Triftshäuser, W.

AU - Britton, D. T.

PY - 2001

Y1 - 2001

N2 - The annealing behaviour of defect structures in hydrogenated amorphous silicon, produced by hot wire chemical vapour deposition (HWCVD) has been studied by pulsed and conventional positron beam techniques and X-ray diffraction. Positron lifetime measurements show a dominant component corresponding to small vacancy clusters. Doppler Broadening measurements indicate that the size and concentration of defects varies with annealing temperatures up to 400°C. This behaviour is accompanied by a change from the amorphous to a partly crystalline structure, which can be observed by X-ray diffraction studies.

AB - The annealing behaviour of defect structures in hydrogenated amorphous silicon, produced by hot wire chemical vapour deposition (HWCVD) has been studied by pulsed and conventional positron beam techniques and X-ray diffraction. Positron lifetime measurements show a dominant component corresponding to small vacancy clusters. Doppler Broadening measurements indicate that the size and concentration of defects varies with annealing temperatures up to 400°C. This behaviour is accompanied by a change from the amorphous to a partly crystalline structure, which can be observed by X-ray diffraction studies.

KW - Crystallisation

KW - Electron momentum

KW - Hydrogenated amorphous silicon

KW - Positron lifetime

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=0035010354&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/msf.363-365.463

DO - 10.4028/www.scientific.net/msf.363-365.463

M3 - Conference article

AN - SCOPUS:0035010354

SN - 0255-5476

VL - 363-365

SP - 463

EP - 465

JO - Materials Science Forum

JF - Materials Science Forum

T2 - 12th International Conference on Positron Annihilation

Y2 - 6 August 2000 through 12 August 2000

ER -

Annealing effects in hydrogenated amorphous silicon layers

Abstract

Keywords

ASJC Scopus subject areas

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