Annealing and recrystallization of hydrogenated amorphous silicon

D. T. Britton, A. Hempel, M. Härting

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33 Citations (Scopus)


Using a combination of positron annihilation and x-ray-diffraction techniques, we have shown that low hydrogen concentration hot wire chemical vapor deposition grown a-Si:H forms a continuous random network with no detectable free volume in the form of microvoids, and no evidence of a microcrystalline phase. On annealing up to 400 °C, the amorphous network is seen to relax and the first stages of recrystallization occur. There is also evidence of vacancy clustering to form a low concentration of microvoids. The structural relaxation has a very low activation energy, around 0.1 eV, and is probably caused by a reconfiguration of hydrogen-terminated dangling, bond defects. The formation of microvoids and the recrystallization can both be interpreted by the migration of unterminated dangling-bond defects.

Original languageEnglish
Article number075403
Pages (from-to)754031-754038
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
Publication statusPublished - 15 Aug 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials


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